Laser crystallization of a-Si:H/a-SiNx:H multilayers

Xu Guang Huang; Wing-Kee Lee; Da Liu; Zhenxin Yu

doi:10.1117/12.237732

8 April 1996 Laser crystallization of a-Si:H/a-SiN_x:H multilayers

Xu Guang Huang, Wing-Kee Lee, Da Liu, Zhenxin Yu

Proceedings Volume 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics; (1996) https://doi.org/10.1117/12.237732
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Visible photoluminescence from crystallized a-Si:H/a-SiN_x:H multilayers has ben observed at room temperature. Analyses using transmission optical microscopy, scanning electron microscopy, and x-ray diffraction show that the laser crystallization of multilayer samples take place in the solid-phase crystallization region and the average crystalline grain size is limited by the thickness of the a-Si:H well-layer. The photoluminescence peak position increases with the decrease of well thickness, while the spectral width decreases. Photoluminescence decay time decreases with the decrease of the well thickness. The experimental results are in agreement with those obtained by calculations based on the quantum confinement model.

Citation Download Citation

Xu Guang Huang, Wing-Kee Lee, Da Liu, and Zhenxin Yu "Laser crystallization of a-Si:H/a-SiN_x:H multilayers", Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); https://doi.org/10.1117/12.237732

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