8 April 1996 Laser crystallization of a-Si:H/a-SiNx:H multilayers
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Abstract
Visible photoluminescence from crystallized a-Si:H/a-SiNx:H multilayers has ben observed at room temperature. Analyses using transmission optical microscopy, scanning electron microscopy, and x-ray diffraction show that the laser crystallization of multilayer samples take place in the solid-phase crystallization region and the average crystalline grain size is limited by the thickness of the a-Si:H well-layer. The photoluminescence peak position increases with the decrease of well thickness, while the spectral width decreases. Photoluminescence decay time decreases with the decrease of the well thickness. The experimental results are in agreement with those obtained by calculations based on the quantum confinement model.
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Xu Guang Huang, Wing-Kee Lee, Da Liu, Zhenxin Yu, "Laser crystallization of a-Si:H/a-SiNx:H multilayers", Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); doi: 10.1117/12.237732; https://doi.org/10.1117/12.237732
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