8 April 1996 Laser maskless formation of submicrometer periodic relief gratings on AIIIBV semiconductor wafers by combination of holographic and surface electromagnetic wave generation methods
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Abstract
The review of experimental investigations on maskless formation of submicron periodic relief structures on AIIIBV semiconductor surfaces (period d equals 230 - 800 nm), carried out in the Scientific Research Center for Technological Lasers of Russian Academy of Sciences during the last two years, is presented.
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Vladislav Ya. Panchenko, Vladislav Ya. Panchenko, Alexander I. Khudobenko, Alexander I. Khudobenko, Vladimir N. Seminogov, Vladimir N. Seminogov, } "Laser maskless formation of submicrometer periodic relief gratings on AIIIBV semiconductor wafers by combination of holographic and surface electromagnetic wave generation methods", Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); doi: 10.1117/12.237765; https://doi.org/10.1117/12.237765
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