3 January 1996 1.54-um emission enhancement in silicon doped with erbium
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Proceedings Volume 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions; (1996) https://doi.org/10.1117/12.229153
Event: Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare Earth and Transitional Ions, 1995, St. Petersburg, Russian Federation
Abstract
The electronic structure of the silicon crystals doped with erbium in the melt during the crystal growth and by ion implantation method is demonstrated to be responsible for the formation of the erbium bonds with three or two ligands which result in the trigonal and orthorhombic deep centers, respectively. The resonance in the energies of the Er2+/Er3+ deep level and the 4I15/2 yields 4I13/2 intracenter transition for the Er3+ ion is shown to enhance the 1.54 micrometer intracenter luminescence because of the auger process excitation.
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D. E. Onopko, D. E. Onopko, Nikolai T. Bagraev, Nikolai T. Bagraev, Alexander I. Ryskin, Alexander I. Ryskin, } "1.54-um emission enhancement in silicon doped with erbium", Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); doi: 10.1117/12.229153; https://doi.org/10.1117/12.229153
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