Paper
3 January 1996 Covalent effects and optical spectra of transition metal impurities in semiconductors
V. Fleurov, P. Dahan
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Proceedings Volume 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions; (1996) https://doi.org/10.1117/12.229159
Event: Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare Earth and Transitional Ions, 1995, St. Petersburg, Russian Federation
Abstract
Covalent interaction of the electrons from the unfilled d-shell of transition metal impurities in semiconductors with ligands results in swelling the d-electron wave functions. Several obvious results of this are a drastic increase of the absorption cross-section (antenna effect), lifting of bans for some dipole transitions due to mixing of the states with different parities. A less obvious consequence is a possibility of lines complementing the intracenter transitions to the forbidden energy gap. They appear due to multielectron structure of the d-shells and become observable in the luminescence due to an interference of the covalent effects and the electron phonon interaction. The same effects lead to a long living metastable electronically excited 2E configuration of the d atom. As a result observation of the complementing lines in the absorption also becomes possible.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. Fleurov and P. Dahan "Covalent effects and optical spectra of transition metal impurities in semiconductors", Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); https://doi.org/10.1117/12.229159
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KEYWORDS
Electrons

Phonons

Transition metals

Absorption

Copper

Chemical species

Semiconductors

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