3 January 1996 Electroluminescence and excitation mechanism of erbium ions in erbium-doped crystalline silicon
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Proceedings Volume 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions; (1996) https://doi.org/10.1117/12.229156
Event: Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare Earth and Transitional Ions, 1995, St. Petersburg, Russian Federation
Abstract
Electroluminescence (EL) of photodiodes fabricated from erbium-implanted silicon is studied at direct bias of p-n junction. A correlation between the intensities of EL of free excitons and erbium ions is found in dependence on pumping current. A model of f-shell excitation of optically active erbium ions is proposed basing on the assumption that the excitation of erbium ions occurs via capture of free excitons on neutral donor formed by erbium-oxygen complex with a subsequent auger-excitation of f-shell of erbium ion during recombination of a bound exciton. The model proposed permits us to described the experimental results.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikhail S. Bresler, Oleg B. Gusev, M. I. Macoviichuk, Petr E. Pak, Evgenii O. Parshin, Elena I. Shek, Nikolai A. Sobolev, Irina N. Yassievich, B. P. Zakharchenya, "Electroluminescence and excitation mechanism of erbium ions in erbium-doped crystalline silicon", Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); doi: 10.1117/12.229156; https://doi.org/10.1117/12.229156
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