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3 January 1996 Luminescent rare-earth complexes in ion-implanted GaAs
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Proceedings Volume 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions; (1996) https://doi.org/10.1117/12.229155
Event: Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare Earth and Transitional Ions, 1995, St. Petersburg, Russian Federation
Abstract
Interaction of rare earth element Yb with oxygen and chalcogenide (S, Se, Te) co-dopants in thin ion-implanted GaAs layers was found to produce efficient luminescence complexes Yb+O+S/Se/Te with systematic increase of transition energy with the increase of chalcogenide atom size and decrease of participating phonon energy with the increase of the atom mass.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. M. Konnov, T. V. Larikova, N. N. Loyko, V. A. Dravin, V. V. Ushakov, and A. A. Gippius "Luminescent rare-earth complexes in ion-implanted GaAs", Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); https://doi.org/10.1117/12.229155
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