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3 January 1996 Two novel mechanisms of f-f-luminescence resonance excitation in semiconductors
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Proceedings Volume 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions; (1996) https://doi.org/10.1117/12.229150
Event: Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare Earth and Transitional Ions, 1995, St. Petersburg, Russian Federation
Abstract
Two novel mechanisms of f-f-luminescence excitation in semiconductors doped by rare-earth elements have been proposed. The first mechanism is concerned with doping a heterostructure with quantum wells. The second one occurs when a quantizing magnetic field is applied to a doped semiconductor. It is shown that in both cases the Coulomb excitation process of the f- electron on the impurity atom by an electron-hole pair from semiconductor is of resonance nature. In this case the f-f-radiation excitation is shown to be several orders of magnitude greater in efficiency.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Georgy G. Zegrya and V. F. Masterov "Two novel mechanisms of f-f-luminescence resonance excitation in semiconductors", Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); https://doi.org/10.1117/12.229150
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