27 May 1996 ArF excimer laser-induced absorption in soot-remelted silicas
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Abstract
Characteristics of ArF excimer laser induced absorption in various types of fused silicas synthesized by VAD soot remelting methods were investigated. Fused silica containing 30 and 70 ppm of OH and no Cl, shows absorption bands at 215 nm ascribed to E' center (identical with Si(DOT)) and absorption band at 260 nm ascribed oxygen related center. A sample containing about 800 ppm of Cl and no OH shows only 215-nm band. A OH and Cl free silica, have preexisting absorption band at 245 nm ascribed to oxygen deficient center (ODC; identical with Si(DOT)(DOT)(DOT)Si identical with) and weak band at 215 nm; the 245-nm band change into the 215-nm band by irradiating with the ArF laser. A model to describe these phenomena are proposed: the glass networks considerably deformed from ideal network and terminal groups, such as Si-OH and Si-Cl, reduce some amount of highly strained bonds. In the sample containing only Cl, Si-Cl could be major precursor of the E' center and only weak 215-nm band is observed. In silica containing 30 - 70 ppm OH and no Cl, bond breakage is major process to produce ArF laser induced defects. Samples without such terminal groups, some of the strained bonds cannot retain in the glass network, and defect structures such as ODC and E' centers will be formed even in as-synthesized material.
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Nobu Kuzuu, "ArF excimer laser-induced absorption in soot-remelted silicas", Proc. SPIE 2714, 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995, (27 May 1996); doi: 10.1117/12.240353; https://doi.org/10.1117/12.240353
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