Paper
27 May 1996 OH content dependence of ArF excimer-laser-induced absorption in type III fused silica
Nobu Kuzuu
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Abstract
OH content dependence of the intensity of ArF-excimer laser induced absorption in fused silica synthesized under reducing condition was investigated. The absorption spectra of each silica has a peak of 220 nm, and the intensity of which increases with decreasing OH content. Above OH content about 1150 ppm, ArF laser induced absorption was not observed. Annealing in He ambient, suppressed the creation of the 220 nm band, and no absorption was observed in the sample containing greater than 800 ppm of OH. The annealing in the H2 ambient was not so effective as in He ambient. These results indicate that the fused silica synthesized under reducing conditions and containing OH more than about 1150 ppm was found to be desirable material for excimer laser optics. The fused silica containing more than 800 ppm of OH annealed in the He ambient can also be used as excimer laser optics.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nobu Kuzuu "OH content dependence of ArF excimer-laser-induced absorption in type III fused silica", Proc. SPIE 2714, 27th Annual Boulder Damage Symposium: Laser-Induced Damage in Optical Materials: 1995, (27 May 1996); https://doi.org/10.1117/12.240372
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Cited by 10 scholarly publications.
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KEYWORDS
Silica

Absorption

Annealing

Glasses

Excimer lasers

Laser optics

Silicon

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