GaAlAs/GaAs Avalanche Photodetectors

H. D. Law; K. Nakano; J. J. Coleman

doi:10.1117/12.965692

28 July 1981 GaAlAs/GaAs Avalanche Photodetectors

H. D. Law, K. Nakano, J. J. Coleman

Proceedings Volume 0272, High Speed Photodetectors; (1981) https://doi.org/10.1117/12.965692
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

High performance GaAlAs/GaAs heterostructure avalanche photodiodes (APD) have been fabricated. The spectral response of these devices are from 0.48 μm to 0.89 μm. The quantum efficiency at unity gain is as high as 95%. Microwave gain (273 MHz) of 42 dB has been observed in these devices. Dark current is extremely low ~ l0 -12 A at half the breakdown voltage. Low noise characteristics of the Read structure APD cannot be verified at this moment because of the poorer performance than the traditional LPE heterostructure APD. With careful design, III-V heterostructure photodiode can have response time as low as 5 ps.

Citation Download Citation

H. D. Law, K. Nakano, and J. J. Coleman "GaAlAs/GaAs Avalanche Photodetectors", Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); https://doi.org/10.1117/12.965692

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available