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28 July 1981 Use Of III-V Compounds For Integrated Optical Circuits
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Proceedings Volume 0272, High Speed Photodetectors; (1981) https://doi.org/10.1117/12.965695
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
Recent progress in the development of integrated optical circuits using the III-V compound semiconductors is reviewed. The application of double heterostructure configurations is emphasized, not only for optical sources, but also for detectors, with reference to both the A.GaAs/GaAs system and the InGaAsP quaternary. Devices utilizing periodic corrugations are described briefly, whereas alternate attempts to fabricate optical circuits by etching or sputtering techniques are discussed in more detail. Recent advances in processing techniques suitable for optical integration, such as reactive-ion etching, and the use of lasers or electron beams for device processing, are described.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James L. Merz "Use Of III-V Compounds For Integrated Optical Circuits", Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); https://doi.org/10.1117/12.965695
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