27 May 1996 Enhanced defect inspection method for x-ray masks
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Abstract
We have developed new enhanced inspection techniques for small hole defect and half-tone defect in x-ray masks with the printed wafer inspection method. As the inspection sensitivity depends on the signal quality from the inspection sample as well as the performance of the inspection system, we focused on improving the signal quality from the resist pattern by selecting a better x-ray exposure condition. To inspect small hole defects in x-ray mask, we fabricated dot patterns with high contrast signal by printing with negative resist, and succeeded in detecting them accurately. For half-tone defects in x-ray mask, we induced larger defects than original ones by varying the x-ray exposure dosage from the standard, and succeeded in detecting them accurately. These techniques are being applied to the defect inspection process to make a defect-free x-ray mask.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Misao Sekimoto, Ikuo Okada, Yasunao Saitoh, Tadahito Matsuda, "Enhanced defect inspection method for x-ray masks", Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240488; https://doi.org/10.1117/12.240488
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