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27 May 1996 Experiment and simulation of e-beam direct writing over topography
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Electron beam direct writing is used to structure resist over topographical surfaces of technological layers. By using accelerating voltages of 2.5 kV and 20 kV different shapes of the resist profiles after wet deveopment are found. Applying Monte-Carlo methods to simulate the travelling of electrons in matter and using a cell-removal-algorithm to calculate the following wet development an agreement between experimental and simulated resist profiles is achieved to understand this behavior.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ulrich A. Jagdhold, Lothar Bauch, and Monika Boettcher "Experiment and simulation of e-beam direct writing over topography", Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996);

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