Paper
27 May 1996 Fine-pitch control in EB lithography for semiconductor laser grating formation
Yoshihiro Hisa, Hiroyuki Minami, Kimitaka Shibata, Akira Takemoto, Kazuhiko Sato, Kouki Nagahama, Mutuyuki Otsubo, Masao Aiga
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Abstract
Grating-pitch accuracy is studied from minimum pitch variation point of view. The pitches of the gratings delineated at the focus range from -50micrometers to +50micrometers and stitching errors between subfields are evaluated using an EB machine which features a long distance between the deflector and the wafer stage. The grating pitch variation is realized by using a deflection amplitude control. It is confirmed that errors of the pitches due to defocus are less than 0.05 nm, and the deviations from nominal setting of the pitch are also less than 0.1 nm when the pitches are varied from -6 percent to +6 percent at 0.1 percent step.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshihiro Hisa, Hiroyuki Minami, Kimitaka Shibata, Akira Takemoto, Kazuhiko Sato, Kouki Nagahama, Mutuyuki Otsubo, and Masao Aiga "Fine-pitch control in EB lithography for semiconductor laser grating formation", Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); https://doi.org/10.1117/12.240467
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KEYWORDS
Lithography

Semiconducting wafers

Wavelength division multiplexing

Diffraction gratings

Semiconductor lasers

Metalorganic chemical vapor deposition

Diffraction

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