27 May 1996 Formation of submicrometer current-blocking layer for high-power GaAs/AlGaAs quantum wire array laser
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Short-period GaAs quantum wire (QWR) array was grown by metalorganic chemical vapor deposition on submicron gratings. And a new lithography technique to fabricate submicron current-blocking layer on the short-period QWR array without any external masks was developed. The methods include the followings. The photoresist was coated on the nonplanar top of the laser diode structure. The photoresist stripes were designed to remain over each QWR with a flood exposure and a develop technique. The GaAs contact layers on the parts of the (111)A and all the (100) top quantum wells were removed by employing the photoresist remaining on the top valley as masks. The submicron current-blocking layer was produced all over the regions except QWR's, by sputtering SiO2 film followed by lift-off and metal evaporation. It must help a majority of current pass into QWR active region.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tae-Geun Kim, Tae-Geun Kim, Sung Min Hwang, Sung Min Hwang, Seong-Il Kim, Seong-Il Kim, Chang-Sik Son, Chang-Sik Son, Eun Kyu Kim, Eun Kyu Kim, Suk-Ki Min, Suk-Ki Min, Jung-Ho Park, Jung-Ho Park, Kyung Hyun Park, Kyung Hyun Park, } "Formation of submicrometer current-blocking layer for high-power GaAs/AlGaAs quantum wire array laser", Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); doi: 10.1117/12.240497; https://doi.org/10.1117/12.240497


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