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27 May 1996 Optical system for high-throughput EUV lithography
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Abstract
The designed optical system, which included an illumination optics and an imaging optics, consists of only one grazing-incidence mirror and a two-aspheric-mirror optics with a synchrotron radiation (SR) as a light-source. The illumination optics provides uniform illumination and high-collection efficiency of radiation from the SR. Since there are only four bounces in this system, including the reflective-mask bounce, this optical system has higher throughput. A throughput of 20-30 wafers/hour is predicted with the designed optics. A one- quarter-size prototype of the designed imaging optics was constructed with the numerical aperture of 0.1 and the magnification of 1/5. The efficiency of 60 percent (obtaining dose per estimated one) was obtained with AZ-PN 100 resist in the experiment. A minimum pattern of 0.12-micrometers lines and spaces was printed on a 0.15-micrometers -thick layer of AZ-PN 100 resist.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Souichi Katagiri, Masaaki Ito, Hiromasa Yamanashi, Eiichi Seya, and Tsuneo Terasawa "Optical system for high-throughput EUV lithography", Proc. SPIE 2723, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing VI, (27 May 1996); https://doi.org/10.1117/12.240487
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