14 June 1996 Block and random copolymer resists designed for 193-nm lithography and environmentally friendly supercritical CO2 development
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Abstract
The concept of using block copolymers as resist materials is presented. Both the demonstrated enhancements of block copolymers, compared to random copolymer resists, as well as benefits still to be exploited are discussed. In our own research, block and random copolymer 193 nm resists were prepared using the monomers tert-butyl methacrylate (t-BMA) and 3- methacryloxypropylpenta-methyldisiloxane (SiMA). The resists have a high resistance to oxygen plasma reactive ion etching, making them suitable for the imageable layer of a bilevel resist system. Of particular interest is the development behavior of the copolymer resists. After exposure, the block copolymers develop better in aqueous base than the corresponding random copolymers. Thus, it appears that incorporating the hydrophobic (but etch resistant) siloxane component into the resist as a distinct block is an effective way of achieving aqueous base solubility with copolymers of t-BMA and SiMA. The copolymers with higher silicon- concentrations are also developable as negative tone resists using environmentally friendly supercritical carbon-dioxide. Thus, without using organic solvent, these resists are developable in both positive and negative tones. Some of the future benefits of using block copolymers that we envision include diffusion barriers for photo-generated acid and passivation of reactive substrates.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Allen H. Gabor, Allen H. Gabor, Robert D. Allen, Robert D. Allen, Paula M. Gallagher-Wetmore, Paula M. Gallagher-Wetmore, Christopher Kemper Ober, Christopher Kemper Ober, } "Block and random copolymer resists designed for 193-nm lithography and environmentally friendly supercritical CO2 development", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241839; https://doi.org/10.1117/12.241839
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