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14 June 1996 Contrast-boosted resist using a polarity-change reaction during aqueous base development
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Abstract
A high-contrast resist, called a contrast boosted resist (CBR), using a water-repellent compound that changes into hydrophilic compounds during aqueous base development has been developed for electron-beam (EB) lithography. TBAB, 1,3,5-tris(bromoacetyl)benzene, was identified as the best water-repellent compound for the CBR. A CBR composed of novolak resin, hexamethoxymethylmelamine, 1,3,5-tris(trichloromethyl)triazine as an efficient acid generator, and TBAB enables the definition of 0.225-micrometer line-and-space patterns with an exposure dose of only 2 (mu) C/cm2 using an EB writing system (acceleration voltage: 50 kV). The polarity change caused by the reaction of the TBAB with the base as well as crosslinking of the novolak resin by the TBAB are assumed to enhance the contrast in the CBR.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shou-ichi Uchino, Takumi Ueno, Sonoko Migitaka, Jiro Yamamoto, Toshihiko P. Tanaka, Fumio Murai, Hiroshi Shiraishi, and Michiaki Hashimoto "Contrast-boosted resist using a polarity-change reaction during aqueous base development", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241842
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