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14 June 1996 Design of high-performance chemically amplified resist
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The lithographic performance of chemically amplified positive resists has nearly reached at the level of application to quarter-micron level with regard to their resolution and sensitivity. However, it is hard to say that the problem of post exposure delay (PED), which contains formation of 'T-top' shape or 'foot' profiles, has been completely solved. We studied structure effect of both a dissolution inhibitor and a protecting group on the problem. It was shown that a resist film having a dissolution inhibitor derived from trisphenol looses less amount of acid by evaporation compared with one having bisphenol type dissolution inhibitor. With regard to easiness of cleavage of the protecting group, IR measurement has confirmed that the dissociation of t-BOC occurs during PEB whereas that of THP occurs during exposure. Molecular orbital calculation showed that acetal group can be protonated easier than carbonate group and that both of them will have no barrier to cleave after protonation. Bases on the above findings, we have obtained the high performance resist by applying these findings.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takaaki Niinomi, Hiroshi Tomiyasu, Yasuhiro Kameyama, Michinori Tsukamoto, Yuki Tanaka, Jun Fujita, Satoshi Shimomura, and Tameichi Ochiai "Design of high-performance chemically amplified resist", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996);

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