Development of two new thick-film photoresists

Stanley A. Ficner; James Hermanowski; Ping-Hung Lu; Elaine Kokinda; Yvette M. Perez; Ralph R. Dammel

doi:10.1117/12.241864

14 June 1996 Development of two new thick-film photoresists

Stanley A. Ficner, James Hermanowski, Ping-Hung Lu, Elaine Kokinda, Yvette M. Perez, Ralph R. Dammel

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241864
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

This paper describes the development of two advanced new thick film photoresists. Statistical experimental design was used to investigate the performance characteristics of a select group of novolak resins and diazonaphthoquinone photoactive compounds. After these initial formulation experiments, evaluations of the best candidate were carried out on an Ultratech stepper using current production photoresists as a benchmark. The main evaluation criteria were used as outputs of the designed experiment (resolution, side-wall profile, t-topping, and photosensitivity) and then correlated with resin characteristics and relative photosensitizer concentration. The results of these studies led to the development of two formulations for specific photoresist thicknesses: EXP AZ^R 9147 photoresist for 5 micrometer and EXP AZ^R 9262 photoresist of 24 micrometer. These final formulations show improvements in all evaluated performance fields versus the current production benchmarks.

Citation Download Citation

Stanley A. Ficner, James Hermanowski, Ping-Hung Lu, Elaine Kokinda, Yvette M. Perez, and Ralph R. Dammel "Development of two new thick-film photoresists", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241864

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