Diffusion limitations in high-resolution lithography

Lothar Bauch; Ulrich A. Jagdhold; Monika Boettcher; Georg G. Mehliss

doi:10.1117/12.241847

14 June 1996 Diffusion limitations in high-resolution lithography

Lothar Bauch; Ulrich A. Jagdhold; Monika Boettcher; Georg G. Mehliss

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Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241847
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The reduction of the resist thickness, needed for high resolution lithography, increases thin film effects. The PRIME-process is used as an example of high resolution lithography (structure width less than 0.2 micrometer). In the paper the influence of the resist thickness and the DNQ-diffusion is studied by simulations and experiments. As a result it is to conclude, that the diffusion of DNQ has to be minimized to about 20 nm caused by the lateral dimension of the structures.

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Lothar Bauch, Lothar Bauch, Ulrich A. Jagdhold, Ulrich A. Jagdhold, Monika Boettcher, Monika Boettcher, Georg G. Mehliss, Georg G. Mehliss, } "Diffusion limitations in high-resolution lithography", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241847; https://doi.org/10.1117/12.241847

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