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14 June 1996 Enhanced i-line lithography using AZ BARLi coating
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Abstract
A combined wet/dry develop process using AZR 7800 resist is described which achieves final resolution of 0.25 micrometer lines and spaces after transfer into the semiconductor substrate. The process utilizes AZR BARLiTM bottom coating both as an antireflective and as an etch enhancement layer. Features which are not resolved after the wet development step can be transferred linearly in the dry development step, which allows the introduction and removal of lithographic bias in a feature-size independent way. The resist process used employs very short bake times at high temperatures to achieve improved resist densification, which leads to substantial gains in thermal stability.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T.-S. Yang, Taeho H. Kook, W. A. Josephson, Mark A. Spak, and Ralph R. Dammel "Enhanced i-line lithography using AZ BARLi coating", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241871
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