Evaluation of cycloolefin-maleic anhydride alternating copolymers as single-layer photoresists for 193-nm photolithography

Thomas I. Wallow; Francis M. Houlihan; Omkaram Nalamasu; Edwin A. Chandross; Thomas X. Neenan; Elsa Reichmanis

doi:10.1117/12.241834

Translator Disclaimer

14 June 1996 Evaluation of cycloolefin-maleic anhydride alternating copolymers as single-layer photoresists for 193-nm photolithography

Thomas I. Wallow, Francis M. Houlihan, Omkaram Nalamasu, Edwin A. Chandross, Thomas X. Neenan, Elsa Reichmanis

Author Affiliations +

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241834
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

We have developed a fundamentally new class of photoresist matrix resins for use in 193 and 248 nm lithography based on cycloolefin-maleic anhydride alternating copolymers. When used in three-component formulations with cholate-based dissolution inhibitions (DIs) and conventional photoacid generators, these copolymers afford positive-tone resists with potential sub-0.25 micrometer image fidelity. The resists exhibit high contrast (3 - 5.5) and high sensitivity (3 - 5 mJ/cm² at 248 nm, depending on exact formulation) with low loadings (ca. 1 wt%) of triphenylsulfonium salt photoacid generators. These formulations are sufficiently transparent to be used at 193 nm without further modification.

Citation Download Citation

Thomas I. Wallow, Francis M. Houlihan, Omkaram Nalamasu, Edwin A. Chandross, Thomas X. Neenan, and Elsa Reichmanis "Evaluation of cycloolefin-maleic anhydride alternating copolymers as single-layer photoresists for 193-nm photolithography", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241834

ACCESS THE FULL ARTICLE