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14 June 1996 Evaluation of cycloolefin-maleic anhydride alternating copolymers as single-layer photoresists for 193-nm photolithography
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Abstract
We have developed a fundamentally new class of photoresist matrix resins for use in 193 and 248 nm lithography based on cycloolefin-maleic anhydride alternating copolymers. When used in three-component formulations with cholate-based dissolution inhibitions (DIs) and conventional photoacid generators, these copolymers afford positive-tone resists with potential sub-0.25 micrometer image fidelity. The resists exhibit high contrast (3 - 5.5) and high sensitivity (3 - 5 mJ/cm2 at 248 nm, depending on exact formulation) with low loadings (ca. 1 wt%) of triphenylsulfonium salt photoacid generators. These formulations are sufficiently transparent to be used at 193 nm without further modification.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas I. Wallow, Francis M. Houlihan, Omkaram Nalamasu, Edwin A. Chandross, Thomas X. Neenan, and Elsa Reichmanis "Evaluation of cycloolefin-maleic anhydride alternating copolymers as single-layer photoresists for 193-nm photolithography", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241834
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