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14 June 1996 Exposing of surface layers of PMMA structures by low-energy (1000-6000 eV) electron irradiation
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This work is devoted to the development of a new submicrofabrication method based on low energy electron irradiation of polymer resist structures. The penetration depth of electrons must be less than the structure's height and width. Electrons reflected from the substrate expose the side walls of structures, and after development of the exposed surface layer the narrow zone around the residuary part of resist can be used for the formation of submicron elements. Calculations of the absorbed energy density distribution in the resist that determines the development result were performed. Both energy and angle peculiarities ofelectron scattering by solids were taken into account in the calculations. As the first step in the calculations the efficiency of side wall exposure, i.e., the fraction ofthe substrate irradiation dose, was estimated. After that, equidose surfaces ofabsorbed energy density were piotted using the calculated distribution ofthe latter within stmcture profiles. The dependence of the size of elements created by this method on the substrate irradiation dose was obtained with the help of the threshold development model. The limits of the irradiation parameters within which the method is valid were also determined from the calculations. Key words: electron resist, PMMA, low energy electron irradiation, absorbed energy density, self-alignment, backseattered electrons.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatyana Borzenko, Yuri I. Koval, and Vladimir A. Kudryashov "Exposing of surface layers of PMMA structures by low-energy (1000-6000 eV) electron irradiation", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996);


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