14 June 1996 Halation reduction for single-layer DUV resist processing
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Abstract
In order to apply single layer resist processing to 0.25-micrometer patterning, the effect of topography was studied in KrF excimer laser lithography, using a two-dimensional resist profile simulator with vector model. In particular, we simulated resist transmittance dependence on depth of focus (DOF) and halation, by considering a conventional (non- bleaching type) DUV chemically amplified positive resist. Here, we varied the step angle of the topographic substrate (height 0.1 micrometer) and the distance between step and resist pattern. Moreover, we investigated the influence of two optical resist characteristics, photo- bleaching and photo-coloring, from the viewpoint of halation reduction. For a highly reflective substrate such as polysilicon, the optimum transmittance (DOF greater than or equal to 1.0 micrometer) of the non-bleaching type resist with a resist thickness of 0.7 micrometer was determined to be 40 - 50%. In such a non-bleaching type resist, a good profile was obtained when the distance between the step and the resist pattern edge was more than 0.3 micrometers. Moreover, it was found that photo-coloring in the resist film was effective for halation reduction.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Yoshino, Hiroshi Yoshino, Toshiro Itani, Toshiro Itani, Shuichi Hashimoto, Shuichi Hashimoto, Mitsuharu Yamana, Mitsuharu Yamana, Norihiko Samoto, Norihiko Samoto, Kunihiko Kasama, Kunihiko Kasama, } "Halation reduction for single-layer DUV resist processing", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241819; https://doi.org/10.1117/12.241819
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