High-performance TSI process for e-beam using vapor-applied crosslinking silylating agents

Mathias Irmscher; Bernd Hoefflinger; Reinhard Springer; Craig Stauffer; William Peterson

doi:10.1117/12.241855

14 June 1996 High-performance TSI process for e-beam using vapor-applied crosslinking silylating agents

Mathias Irmscher, Bernd Hoefflinger, Reinhard Springer, Craig Stauffer, William Peterson

Proceedings Volume 2724, Advances in Resist Technology and Processing XIII; (1996) https://doi.org/10.1117/12.241855
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The use of the SAHR (silylated acid hardened resist)-process for e-beam direct writing enables a high resolution in thick resists because the resolution-limiting effect of the forward scattering is eliminated. However, the volume expansion combined with the drop in glass transition temperature during silylation by monofunctional agents prevents, in spite of using the flow- effect reducing pre silylation development (PSD), the faithful preparation of irregular subquarter-micron patterns. In order to eliminate the flow problem and ensure high silicon contrast as well as low swelling of the silylated resist region, we evaluated mixtures of dimethylsilydiethylamine (DMSDEA) and bis(dimethylamino)methylsilane [B(DMA)MS] as silylating agents. A bifunctional agent share of 30% restrains the flow effect without decreasing the silicon concentration in contrast to the use of pure DMSDEA. A short, dilute alkaline development before silylation increases the dependence of silicon depth on exposure dose and reduces as a consequence the CD-deviations of irregular pattern elements due to the pattern-related backscattering. The realization of a 0.15 micrometer pattern in 0.7 micrometer thick resist has been demonstrated.

Citation Download Citation

Mathias Irmscher, Bernd Hoefflinger, Reinhard Springer, Craig Stauffer, and William Peterson "High-performance TSI process for e-beam using vapor-applied crosslinking silylating agents", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241855

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KEYWORDS

Silicon

Backscatter

Etching

Electrons

Plasma

Diffusion

Photoresist processing

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