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14 June 1996 Lithographic characterization of AZ 7800 high-resolution photoresist
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Progress in high resolution resists has contributed substantially to the continuing success of i- line lithography. We report here on a resist development as well as complete lithographic characterization of AZR 7800 photoresist, a new commercial high-resolution i-line resist. Results to be reported are resist optimization via statistical experimental design, linearity, focus and exposure latitudes for different feature types in bright and dark field exposures. AZR 7800 photoresist is 2.38% TMAH compatible and achieves 0.28 micrometer final resolution on a 0.63 NA stepper at a photospeed of ca. 170 mJ/cm2. The focus latitude is for 0.35 micrometer line and space features is 1.2 micrometer; exposure latitude is 24%. The resist performance can be further increased by combination with the AZR BARLiTM bottom coat. AZR 7800 photoresist uses a fractionated novolak resin and a speed enhancer component to simultaneously achieve high photospeed and good thermal stability. The concept differs from the conceptually similar tandem novolak approach proposed by Hanabata in that the speed enhancer is not a novolak. The diazonaphthoquinone sensitizer makes use of another concept first proposed by Hanabata, that of regioselective subesterification. AZR 7800 photoresist will be used as an example to discuss the merits of the 'standard recipe' for advanced i-line resists that has evolved in the last years.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stanley A. Ficner, Oghogho Alile, Ping-Hung Lu, Elaine Kokinda, and Ralph R. Dammel "Lithographic characterization of AZ 7800 high-resolution photoresist", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996);

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