14 June 1996 Method of comparing chemical contrast with resist contrast
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Abstract
This report describes a simple method for quantifying the extent of reaction occurring in positive tone chemically amplified photoresists. It involves comparing the amount of photoacid-induced deprotection (measured by FT-IR) to the resist thickness loss (e.g. the characteristic curve for resist contrast) measured as a function of incident dose. This method compares what we have termed the 'chemical contrast' to the resist contrast. It potentially provides a way to identify factors other than deprotection reactions (such as cross-linking, other chemical reactions or the dissolution inhibition/promotion for the PAG itself) which affect the dissolution properties of chemically amplified resists. This method can also be used to correlate lithographic performance with the actual chemistry occurring in the resist film. Results for a variety of different resist systems are described.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory M. Wallraff, Gregory M. Wallraff, Juliann Opitz, Juliann Opitz, Gregory Breyta, Gregory Breyta, Hiroshi Ito, Hiroshi Ito, Bruce M. Fuller, Bruce M. Fuller, } "Method of comparing chemical contrast with resist contrast", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241814; https://doi.org/10.1117/12.241814
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