14 June 1996 Narrow polydispersity polymers for microlithography: synthesis and properties
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Abstract
The major component of a photoresist formulation is a matrix resin, which therefore has the greatest effect on resist performance. At deep-UV wavelengths the resins of choice are linear phenolic polymers, such as poly(4-hydroxystyrene) (PHOST), which have excellent absorption characteristics within the DUV region. This paper demonstrates the synthesis of a range of narrow polydispersity PHOST polymers (Mn equals 2,000 - 30,000; PD equals 1.1 - 1.4) via a 'living' radical polymerization technique. Further, the effects of polydispersity and molecular weight on the dissolution behavior and thermal properties of these polymers are reported.
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George G. Barclay, C. J. Hawker, Hiroshi Ito, Arturo J. Orellana, P. R.L. Malenfant, Roger F. Sinta, "Narrow polydispersity polymers for microlithography: synthesis and properties", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241823; https://doi.org/10.1117/12.241823
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