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14 June 1996 Narrow polydispersity polymers for microlithography: synthesis and properties
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The major component of a photoresist formulation is a matrix resin, which therefore has the greatest effect on resist performance. At deep-UV wavelengths the resins of choice are linear phenolic polymers, such as poly(4-hydroxystyrene) (PHOST), which have excellent absorption characteristics within the DUV region. This paper demonstrates the synthesis of a range of narrow polydispersity PHOST polymers (Mn equals 2,000 - 30,000; PD equals 1.1 - 1.4) via a 'living' radical polymerization technique. Further, the effects of polydispersity and molecular weight on the dissolution behavior and thermal properties of these polymers are reported.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George G. Barclay, C. J. Hawker, Hiroshi Ito, Arturo J. Orellana, P. R.L. Malenfant, and Roger F. Sinta "Narrow polydispersity polymers for microlithography: synthesis and properties", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241823;

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