14 June 1996 Negative resists for electron-beam lithography utilizing acid-catalyzed intramolecular dehydration of phenylcarbinol
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Abstract
Acid-catalyzed intramolecular dehydration of phenylcarbinol is used to design highly sensitive negative resists for electron beam lithography. Of the phenylcarbinol resists evaluated in this study, the resist composed of 1,3-bis(alpha-hydroxyisopropyl)benzene (Diol-1), m/p-cresol novolak resin, and diphenyliodonium triflate (DIT) shows the best lithographic performance in terms of sensitivity and resolution. Fine 0.25-micrometer line-and-space patterns were formed by using the resist containing Diol-1 with a dose of 3.6 (mu) C/cm2 in conjunction with a 50 kV electron beam exposure system.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sonoko Migitaka, Sonoko Migitaka, Shou-ichi Uchino, Shou-ichi Uchino, Takumi Ueno, Takumi Ueno, Jiro Yamamoto, Jiro Yamamoto, Kyoko Kojima, Kyoko Kojima, Michiaki Hashimoto, Michiaki Hashimoto, Hiroshi Shiraishi, Hiroshi Shiraishi, } "Negative resists for electron-beam lithography utilizing acid-catalyzed intramolecular dehydration of phenylcarbinol", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241859; https://doi.org/10.1117/12.241859
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