14 June 1996 New process for resist removal after lithography process using adhesive tape
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Abstract
A novel concept for the resist removal after the photolithography in the wafer process is introduced. This new process is to peel off the resist layer with a special adhesive tape. A very little contamination on wafers is confirmed. Especially the metal contamination with this new process is very little compared with conventional O2 plasma ashing. Therefore the electrical properties of oxide layer and substrate are significantly improved. This new process should be very effective for the production of front-edge devices because of this improvement. In this paper, along with these observations, the mechanism of the removal is discussed. The monomer in the adhesive layer migrates into the resist layer and the two layers consolidated together. Very fine microanalysis technique to detect this phenomenon in situ is also explained.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatsuya Kubozono, Yutaka Moroishi, Yoshio Ohta, Hideaki Shimodan, Noboru Moriuchi, "New process for resist removal after lithography process using adhesive tape", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); doi: 10.1117/12.241866; https://doi.org/10.1117/12.241866
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KEYWORDS
Semiconducting wafers

Photoresist processing

Adhesives

Contamination

Particles

Prisms

Plasma

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