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14 June 1996 Reduction of substrate dependency of chemically amplified resist
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Abstract
In the case of silicon nitride films acid pretreatment can eliminate resist scum so that we can get clean resist profiles. The acid used, called Clean D treatment for photoresist strip, normally consists of a mixture of sulfuric acid (80% water) and hydrogen peroxide (80% water). ESCA (electron spectroscopy by chemical analysis) was used to examine the surface of the films after cleaning with acid and to monitor the changes in atomic percents of the films with time. Considering all the analytical data, this acid treatment to silicon nitride makes the film surface oxide-rich resulting in forming barrier layer between substrates and protons from PAG (photo acid generator). For BPSG boro-phosphorous silicate glass) films the mechanism of the formation of resist foot is quite different from that of silicon nitride. Improved resist profiles on BPSG were obtained by the dehydration bake. Therefore it could be speculated that the formation of resist scums on silicon nitride films are due to the nitrogen in films and on the BPSG moisture. O2 plasma surface pretreatment was also reviewed. It is quite certain that these two methods, acid and O2 plasma treatments are very effective, economical and simple process. However, there are delay time effects after pretreating films unlike other conventional oxide capping layers. This problem is also discussed in detail.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun-Sung Chun, Cheol-Kyu Bok, and Ki-Ho Baik "Reduction of substrate dependency of chemically amplified resist", Proc. SPIE 2724, Advances in Resist Technology and Processing XIII, (14 June 1996); https://doi.org/10.1117/12.241877
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