21 May 1996 Benchmarking multimode CD-SEM metrology to 180 nm
Author Affiliations +
Fully automated, multi-mode CD-SEM metrology, utilizing both backscattered electron (BSE) and secondary electron (SE) detection, has been benchmarked to 180 nm critical dimensions using patterns generated by deep-UV lithography. Comparison of pure BSE with conventional SE SEM data used in a study of across-chip linewidth variation (ACLV) revealed that heterogeneous system matching depends on feature orientation as well as an offset between BSE and SE intensity profiles. The corresponding AFM data show that the BSE measurements are more accurate and less sensitive to feature orientation and sample charging. Using the multi-mode system, we found that SE profiles had a higher signal-to-noise ratio while the BSE profiles gave a better representation of the actual line shape. Static and dynamic measurement precision below 2 nm has been achieved with BSE on etched polysilicon. Move-acquire- measure (MAM) times at this precision were under 10 seconds per site. Models for orientation-independent measurement, generic wafer throughput, and overall equipment effectiveness were used to address the issues of system matching, tool productivity, and factory integration, respectively.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kevin M. Monahan, Kevin M. Monahan, Farid Askary, Farid Askary, Richard C. Elliott, Richard C. Elliott, Randy A. Forcier, Randy A. Forcier, Rich Quattrini, Rich Quattrini, Brian L. Sheumaker, Brian L. Sheumaker, Jason C. Yee, Jason C. Yee, Herschel M. Marchman, Herschel M. Marchman, Robert D. Bennett, Robert D. Bennett, Steven D. Carlson, Steven D. Carlson, Harry Sewell, Harry Sewell, Diane C. McCafferty, Diane C. McCafferty, Javed Sumra, Javed Sumra, Jane Yan, Jane Yan, } "Benchmarking multimode CD-SEM metrology to 180 nm", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240105; https://doi.org/10.1117/12.240105

Back to Top