21 May 1996 Compensation of intrafield registration error caused by process properties in optical lithography
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Abstract
This paper describes the intra-field registration error caused by the mix of exposure illumination and isolation process independently. Modified illuminations such as annular, quadrupole, and small sigma aperture for phase shift mask are widely used to extend the feasible limits in the current optical process application. Meanwhile, each of the illumination conditions may cause the deterioration of the intra-field registration since they have different optical properties. Also isolation process in CMOS has been considered as a critical step causing the intra-field registration error induced by the wafer stress from the thermal cycle and the different type of films. The mix of illumination conditions, isolation schemes, the temperature and thickness of field oxidation were split to investigate their effects. And the compensation of intra-field registration error was performed by shot scale value.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tae-Gook Lee, Tae-Gook Lee, Seung-Chan Moon, Seung-Chan Moon, Hee-Mok Lee, Hee-Mok Lee, Jeong Soo Kim, Jeong Soo Kim, Chul-Seung Lee, Chul-Seung Lee, H. Y. Kim, H. Y. Kim, Hee Kook Park, Hee Kook Park, } "Compensation of intrafield registration error caused by process properties in optical lithography", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240097; https://doi.org/10.1117/12.240097
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