Critical dimension atomic force microscopy for 0.25-um process development

Guy Vachet; Michael Young

doi:10.1117/12.240112

21 May 1996 Critical dimension atomic force microscopy for 0.25-um process development

Guy Vachet; Michael Young

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Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240112
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Advances in AFM technology both in the area of tip manufacturing and tip-to-sample positioning algorithms have enabled their usage in critical dimensions applications within the fab environment. These advancements are permitting the fab engineers to measure device structures in three dimensions. Critical dimension atomic force microscopy (CD-AFM) of 0.25 um CMOS processes being developed by France Telecom CNET (Centre National d'Etude des Telecommunications) within GRESSI project at Grenoble, are presented and compared with traditional semiconductor metrology methods.

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Guy Vachet, Guy Vachet, Michael Young, Michael Young, } "Critical dimension atomic force microscopy for 0.25-um process development", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240112; https://doi.org/10.1117/12.240112

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