Development of critical dimension measurement scanning electron microscope for ULSI (S-8000 series)

Makoto Ezumi; Tadashi Otaka; Hiroyoshi Mori; Hideo Todokoro; Yoichi Ose

doi:10.1117/12.240146

21 May 1996 Development of critical dimension measurement scanning electron microscope for ULSI (S-8000 series)

Makoto Ezumi, Tadashi Otaka, Hiroyoshi Mori, Hideo Todokoro, Yoichi Ose

Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240146
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The semiconductor industry is moving from half-micron to quarter-micron design rules. To support this evolution, Hitachi has developed a new critical dimension measurement scanning electron microscope (CD-SEM), the model S-8800 series, for quality control of quarter- micron process lines. The new CD-SEM provides detailed examination of process conditions with 5 nm resolution and 5 nm repeatability (3 sigma) at accelerating voltage 800 V using secondary electron imaging. In addition, a newly developed load-lock system has a capability of achieving a high sample throughput of 20 wafers/hour (5 point measurements per wafer) under continuous operation. To support user friendliness, the system incorporates a graphical user interface (GUI), an automated pattern recognition system which helps locating measurement points, both manual and semi-automated operation, and user-programmable operating parameters.

Citation Download Citation

Makoto Ezumi, Tadashi Otaka, Hiroyoshi Mori, Hideo Todokoro, and Yoichi Ose "Development of critical dimension measurement scanning electron microscope for ULSI (S-8000 series)", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240146

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