High-accuracy critical-dimension metrology using a scanning electron microscope

Jeremiah R. Lowney; Andras E. Vladar; Michael T. Postek

doi:10.1117/12.240108

21 May 1996 High-accuracy critical-dimension metrology using a scanning electron microscope

Jeremiah R. Lowney; Andras E. Vladar; Michael T. Postek

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Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240108
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

Two Monte Carlo computer codes have been written to simulate the transmitted-, backscattered-, and secondary-electron signals from targets in a scanning electron microscope. The first discussed, MONSEL-II, is applied to semi-infinite lines produced lithographically on multi-layer substrates. The second discussed, MONSEL-III, is an extension to fully three- dimensional targets. Results are given for a 1 micrometer step etched in a silicon substrate and compared with experimental data. The comparisons show that it is possible to obtain edge locations to an uncertainty of less than 10 nm. Simulations are also given for photoresist lines on a silicon substrate coated with a layer of photoresist. Techniques are developed for simulating signals for finite beam diameter from those for zero beam diameter, and for extracting signals approximating zero beam diameter from those with finite beam diameter.

Citation Download Citation

Jeremiah R. Lowney, Jeremiah R. Lowney, Andras E. Vladar, Andras E. Vladar, Michael T. Postek, Michael T. Postek, } "High-accuracy critical-dimension metrology using a scanning electron microscope", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240108; https://doi.org/10.1117/12.240108

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