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21 May 1996 Improved mask metrology system for 1-Gb DRAM
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Abstract
When we started to develop the mask metrology system named the XY-5i, the photomasks were supposed to be used only until 256M DRAM generation. However, now we are sure that the photomasks can also be applied to the 1G DRAM generation, or 180 nm pattern rule on a wafer. Thus we need to develop a metrology system for the 1G bit through 4G bit DRAM generations. In order to improve the metrology system's performance, we have introduced some new technologies and succeeded in realizing the improvement of the performance ability of the XY-5i. Now the XY-5i has the high technical performance and functions which are good enough to be the mask metrology system for the new generation of 1G DRAM. Moreover, in the XY-5i, we have developed some new metrology functions, such as coordinate measurement of pelliclized masks. We could get some data of the issue regarding the variation of the coordinates between before and after its pelliclization which has been seldom discussed so far.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Eiji Matsubara and Taro Ototake "Improved mask metrology system for 1-Gb DRAM", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240124
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