In-line overlay measurements for advanced photolithography

Eric Rouchouze; Daniel Burlet; Jean Marc Dumant

doi:10.1117/12.240094

21 May 1996 In-line overlay measurements for advanced photolithography

Eric Rouchouze, Daniel Burlet, Jean Marc Dumant

Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240094
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

A set of analysis tools have been set-up to monitor and diagnose the overlay performances of a multi-stepper fab in a mix-and-match environment. A robust first order modeling and efficient software routines were designed for data transfer and processing. Global statistics, along with trend charts are presented. Process corrections and hardware upgrades can have their effects monitored. Lens-to-lens distortion difference and matching performances can also be evaluated.

Citation Download Citation

Eric Rouchouze, Daniel Burlet, and Jean Marc Dumant "In-line overlay measurements for advanced photolithography", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240094

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