Performance of new overlay measurement mark

Sang-Man Bae; Ki-Ho Baik

doi:10.1117/12.240138

21 May 1996 Performance of new overlay measurement mark

Sang-Man Bae, Ki-Ho Baik

Proceedings Volume 2725, Metrology, Inspection, and Process Control for Microlithography X; (1996) https://doi.org/10.1117/12.240138
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The lithography technology for sub 0.25 micron requires new technology to cope with the resolution limit and line width variations due to interference effects and reflections over topography as well as precise overlay accuracy. The high density deices such as 256M DRAM and 1G DRAM require still tighter overlay accuracy. At the same time, the number of overlay measurement steps are even more increased. For example, in the case of 256M DRAM, there are more than 30 overlay measurement marks and 20 making steps. In this paper, new overlay measurement marks (NOMM) are suggested, because this will result in improving not only the overlay process and yield, but also the simplicity of the measurement steps. The function of NOMM is very useful in measuring overlap accuracy among the three circuit patterns simultaneously. Finally, the NOMM implements performance in terms of high speed data analysis and economy of space on the scribe lines. In addition, NOMM can achieve superior execution in the overlay process with still higher accuracy by utilizing optimized overlay mark type.

Citation Download Citation

Sang-Man Bae and Ki-Ho Baik "Performance of new overlay measurement mark", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240138

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