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21 May 1996 Resist metrology for lithography simulation, part I: exposure parameter measurements
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Abstract
The experimental measurement of the photoresist ABC modeling parameters is described and three different data analysis techniques are compared. The best technique, the use of full exposure simulation to fit the data, is shown to be more accurate than the conventional data analysis method over a wide variety of typical substrates. In particular, artificial swing curve like behavior is observed on non-ideal substrates using the standard data analysis, but is readily accounted for in the more accurate full simulation method.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris A. Mack, Toshiharu Matsuzawa, Atsushi Sekiguchi, and Youichi Minami "Resist metrology for lithography simulation, part I: exposure parameter measurements", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); https://doi.org/10.1117/12.240109
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