21 May 1996 Sub-0.35-um critical dimension metrology using atomic force microscopy
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Abstract
The critical dimension atomic force microscope (CD-AFM) provides a number of unique capabilities for in-line metrology. In this paper, we evaluate the CD-AFM as a metrology tool and discuss its capabilities and limitations for semiconductor process development and production. We report that linewidth measurements made by the CD-AFM correlate well with those made by all other techniques generally used to measure submicron features, including scanning electron microscopy and electrical probing. Measurement repeatability is limited primarily by changes in probe tip shape with increased use. When the tip is accurately calibrated, this tool provides width, height, and slope data on etched and photoresist features with nanometer resolution. Increased throughput and improved automation may make the CD- AFM a key metrology tool for next-generation process development.
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Kathryn Guarini, Bhanwar Singh, William H. Arnold, "Sub-0.35-um critical dimension metrology using atomic force microscopy", Proc. SPIE 2725, Metrology, Inspection, and Process Control for Microlithography X, (21 May 1996); doi: 10.1117/12.240111; https://doi.org/10.1117/12.240111
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KEYWORDS
Calibration

Critical dimension metrology

Photoresist materials

Metrology

Atomic force microscopy

Semiconducting wafers

Scanning electron microscopy

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