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7 June 1996 0.2-um lithography using i-line and alternating phase-shift mask
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Abstract
Alternating phase shift mask in association with the I-line resist process is applied to the gate level of 0.25micrometers and below design rules. An exposure latitude of 30 percent on 0.25micrometers isolated lines is deduced from electrical and atomic force microscope measurements of test wafers. Results on batch wafers confirm the ability of this standard process to print 0.25micrometers design rule circuits. It is possible, with minor process modifications, to print 0.18micrometers transistors with good dimension control for architecture studies.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrick Schiavone and Frederic P. Lalanne "0.2-um lithography using i-line and alternating phase-shift mask", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240917
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