7 June 1996 193-nm imaging using a small-field high-resolution imaging resist exposure tool
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Abstract
A 193nm excimer laser microstepper has been developed for deep UV photolithography research at this wavelength. The system incorporates a x10, 0.5NA, 4mm field diameter, high-resolution imaging lens of either all-refractive or catadioptric design. An all-fused silica refractive lens has been used in the results reported here to carry out exposures in polymethylmethacrylate and polyvinylphenol photoresists. Well-resolved images of 0.2micrometers dense lines and spaces and 0.35micrometers diameter contact holes have been produced in PMMA and polyvinylphenol resists.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nadeem Hasan Rizvi, Nadeem Hasan Rizvi, Malcolm C. Gower, Malcolm C. Gower, Dominic Ashworth, Dominic Ashworth, Neil Sykes, Neil Sykes, Phil T. Rumsby, Phil T. Rumsby, Bruce W. Smith, Bruce W. Smith, Francis N. Goodall, Francis N. Goodall, Ronald Albert Lawes, Ronald Albert Lawes, } "193-nm imaging using a small-field high-resolution imaging resist exposure tool", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240981; https://doi.org/10.1117/12.240981
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