7 June 1996 193-nm imaging using a small-field high-resolution imaging resist exposure tool
Author Affiliations +
A 193nm excimer laser microstepper has been developed for deep UV photolithography research at this wavelength. The system incorporates a x10, 0.5NA, 4mm field diameter, high-resolution imaging lens of either all-refractive or catadioptric design. An all-fused silica refractive lens has been used in the results reported here to carry out exposures in polymethylmethacrylate and polyvinylphenol photoresists. Well-resolved images of 0.2micrometers dense lines and spaces and 0.35micrometers diameter contact holes have been produced in PMMA and polyvinylphenol resists.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nadeem Hasan Rizvi, Nadeem Hasan Rizvi, Malcolm C. Gower, Malcolm C. Gower, Dominic Ashworth, Dominic Ashworth, Neil Sykes, Neil Sykes, Phil T. Rumsby, Phil T. Rumsby, Bruce W. Smith, Bruce W. Smith, Francis N. Goodall, Francis N. Goodall, Ronald Albert Lawes, Ronald Albert Lawes, } "193-nm imaging using a small-field high-resolution imaging resist exposure tool", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240981; https://doi.org/10.1117/12.240981


ArF excimer laser for 193-nm lithography
Proceedings of SPIE (July 06 1997)
Pellicle for ArF excimer laser photolithography
Proceedings of SPIE (August 24 1999)
Excimer Laser Stepper for Sub-half Micron Lithography
Proceedings of SPIE (July 24 1989)
High-resolution contact lithography by excimer lasers
Proceedings of SPIE (November 05 2000)
Evaluation of a 193-nm resist and imaging system
Proceedings of SPIE (September 14 1993)

Back to Top