7 June 1996 Challenges to depth-of-focus enhancement with a practical super-resolution technique
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Abstract
A new technique, which combines weak quadrupole illumination and an attenuated phase- shifting mask, has been developed. 0.03 micrometers lithography with i-line can be performed with this technique. It is also confirmed that KrF excimer laser lithography is a powerful candidate for generating 0.18 micrometers -rule devices.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tohru Ogawa, Masaya Uematsu, Koichi Takeuchi, Atsushi Sekiguchi, Tatsuji Oda, "Challenges to depth-of-focus enhancement with a practical super-resolution technique", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240934; https://doi.org/10.1117/12.240934
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