7 June 1996 Challenges to depth-of-focus enhancement with a practical super-resolution technique
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Abstract
A new technique, which combines weak quadrupole illumination and an attenuated phase- shifting mask, has been developed. 0.03 micrometers lithography with i-line can be performed with this technique. It is also confirmed that KrF excimer laser lithography is a powerful candidate for generating 0.18 micrometers -rule devices.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tohru Ogawa, Tohru Ogawa, Masaya Uematsu, Masaya Uematsu, Koichi Takeuchi, Koichi Takeuchi, Atsushi Sekiguchi, Atsushi Sekiguchi, Tatsuji Oda, Tatsuji Oda, } "Challenges to depth-of-focus enhancement with a practical super-resolution technique", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240934; https://doi.org/10.1117/12.240934
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