Paper
7 June 1996 Customizing proximity correction for process-specific objectives
Michael L. Rieger, John P. Stirniman
Author Affiliations +
Abstract
Proximity correction compensates systematic distortions of fabricated integrated circuit structures by providing 'inverse' distorted feature shapes on the mask pattern. Nominally, the 'best' correction might be an inverse shape that minimizes residual deviation at every point in the fabricated feature. However, depending upon the application, the optimum correction may not be defined in such simple terms. In this paper we will discuss methods for optimizing proximity corrections for different fabrication ofjectives and constraints.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael L. Rieger and John P. Stirniman "Customizing proximity correction for process-specific objectives", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240930
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CITATIONS
Cited by 9 scholarly publications.
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KEYWORDS
Photomasks

Process modeling

Semiconducting wafers

Data centers

Nano opto mechanical systems

Lithography

Photoresist processing

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