7 June 1996 Efficient all-solid state 213-nm laser source for microlithography
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Abstract
We describe a 0.4W average power at maximum, frequency-quintupled Q-switched Nd:YAG laser at a repetition rate of 7 kHz, which is a potential light source for next generation microlithography. Calculated results for the conversion efficiencies considering pump depletion will be discussed. Our results allow to foresee further scaling up 213 nm power up to the 1W level by increasing the fundamental power.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeo R. Kubota, Shigeo R. Kubota, Werner Wiechmann, Werner Wiechmann, Ling Yi Liu, Ling Yi Liu, Michio Oka, Michio Oka, Hiroki Kikuchi, Hiroki Kikuchi, Hiroshi Suganuma, Hiroshi Suganuma, Hisashi Masuda, Hisashi Masuda, Minoru Takeda, Minoru Takeda, } "Efficient all-solid state 213-nm laser source for microlithography", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); doi: 10.1117/12.240946; https://doi.org/10.1117/12.240946
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