Evaluation of proximity effects using three-dimensional optical lithography simulation

Chris A. Mack

doi:10.1117/12.240928

7 June 1996 Evaluation of proximity effects using three-dimensional optical lithography simulation

Chris A. Mack

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240928
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

The use of optical lithography modeling as a tool for evaluating proximity effects is described. An extension of the critical dimension error for a one-dimensional mask feature to a critical shape error for a two-dimensional mask feature is presented. Simulation is applied to the evaluation of mask shaping (also called optical proximity correction) using the critical shape error as a metric.

Citation Download Citation

Chris A. Mack "Evaluation of proximity effects using three-dimensional optical lithography simulation", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240928

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available